SMTPA62 [BL Galaxy Electrical]
TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V; 电信保护击穿电压： 62 --- 270 V
| 型号： | SMTPA62 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V |
| 文件： | 总6页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
SMTPAxxx
BL
BREAKDOWN VOLTAGE: 62 --- 270 V
TELECOMMUNICATION PROTECTION
PEAK PULSE POWER: 5000 W
FEATURES
Bidirectional crowbar protection
Voltage range from 62V to 270V
Low capacitance from 15pF to 30pF typ.@50V
SMB
4.5± 0.15
Low leakage current: IR=2μA max
Holding current: IH=150mA min
Repetitive peak pulse current:
IPP=50A,10/1000μs.
5.3± 0.2
DESCRIPTION
The SMTPAxxx series has been designed to protect
telecommunication equipment against lightning and
transient induced by AC power lines.The package/die
size ratio has been optimized by using the SMB package.
0.2± 0.05
1.25± 0.2
SCHEMATIC DIAGRAM
Dimensions in millimeters
Peak surge
Voltage
Current
Required
Necessary
Complies with the
voltage
waveform
waveform peak current resistor
following standards:
(V)
(
s)
(
s)
(A)
(
)
2500
2/10
2/10
10/1000
2/10
500
100
12
GR-1089 Core first level
1000
10/1000
10
GR-1089 Core second level
GR-1089 Core Intra-building
ITU-T-K20/K21
5000
2/10
500
24
1500
2/10
2/10
100
0
6000
1500
150
37.5
53
0
10/700
5/310
6000
8000
ESD contact discharge
ESD air discharge
0
0
ITU-T-K20 (IEC61000-4-2)
1/60 ns
4000
2000
100
21.5
0
VDE0433
0
5/310
50
4000
2000
4000
4000
1500
800
100
0
VDE0878
1.2/50
1/20
50
5/310
8/20
10/160
10/560
0
100
100
200
100
21.5
0
12.5
6.5
10/700
1.2/50
10/160
10/560
IEC-1000-4-5
FCCPart68,lightning surgetypeA
FCCPart68,lightning surgetypeB
1000
9/720
5/320
25
0
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BLGALAXY ELECTRICAL
1.
Document Number 0286002
GALAXY ELECTRICAL
SMTPAxxx
BL
ABSOLUTE MAXIMUM RATINGS (TA=25
)
Symbol
Parameter
Value
Unit
Repetitive peak pulse current
10/1000
8/20μs
s
50
100
55
10/560μs
5/310μs
10/160μs
1/20μs
Ipp
A
65
75
100
150
2.5
2/10μs
8/20μs
Fail safe mode: maximum current
Non repetitive surge peak on-state current (Sinusoidal)
IFS
kA
A
t=20ms
t=16.6ms
t=0.2s
30
32
IFSM
17
t=2s
9
I2t vallue for fusing
t=16.6ms
t=20ms
Maximum
8.5
I2t
A2s
9
Tstg
Tj
TL
Storage temperature range
junction temperature
Storage temperature range Maximum junction temperature
-55to+150
150
260
THERMAL RESISTANCES
Symbol
Parameter
Value
20
100
Unlt
/W
/W
Rth(j-l)
Junction to leads
Rth(j-a) Junction to ambient with recommended footprint
DYNAMIC VBO
@ IBO
STATIC
IRM @ VRM
max.
IR @ VR
max.
I H
C
C
Device
Marking
Code
V
BO @ IBO
max.
Type
max.
min.
typ.
typ.
Note1
Note2
Note3 Note4 Note5
μA
V
mA
V
V
mA
V
mA
mA
150
150
150
150
150
150
150
150
150
150
pF
30
30
20
20
20
15
15
15
15
15
pF
50
45
40
40
35
30
30
30
30
30
SMTPA62
SMTPA68
T62
T68
56
61
90
62
85
82
90
133
160
173
240
267
293
320
360
68
93
SMTPA100
SMTPA120
SMTPA130
SMTPA180
SMTPA200
SMTPA220
SMTPA240
SMTPA270
T100
T120
T130
T180
T200
T220
T240
T270
100
120
130
180
200
220
240
270
135
160
173
235
262
285
300
350
108
117
162
180
198
216
243
2
1.0
800
800
ELECTRICAL CHARACTERISTICS (TA=25
)
I
Symbol
Parameter
I
PP
VRM Stand-off voltage
IRM
VR
VBR
VBO
IH
IBO
IPP
C
Leakage current at stand-off voltage
Continuous reverse voltage
Breakdown voltage
Break over voltage
I
I
I
I
BO
H
R
RM
V
V
BR VBO
V
RM
Holding current
Break over current
Peak pulse current
Capacitance
Note1: See functional break over voltage test circuit 1.
Note2: See test circuit2.
Note3: See functional holding current test circuit 3.
Note4: VR=50V bias, VRMS=1V, F=1MHz.
Note5: VR=2V bias, VRMS=1V, F=1MHz.
www.galaxycn.com
2.
BLGALAXY ELECTRICAL
Document Number 0286002
RATINGS AND CHARACTERISTIC CURVES
SMTPAxxx
TEST CIRCUIT 1 FOR DYNAMIC IBO AND VBO PARAMETERS:
100V/μs, di/dt<10A/μs, Ipp=50A
μ
46
H
Ω
2
Ω
45
Ω
83
Ω
66
U
μ
10
F
0.36nF
Ω
47
KEY TEK 'SYSTEM 2' GENERATOR WITH PN2461 MODULE
1kV/μs, di/dt<10A/μs, Ipp=10A
μ
μ
46 H
26
H
Ω
250
Ω
47
U
μ
60
F
Ω
12
KEY TEK 'SYSTEM 2' GENERATOR WITH PN2461 MODULE
TEST CIRCUIT 2 FOR IBO AND VBO PARAMETERS:
tp=20ms
R1
140
R2
240
k
V
BO
D.U.T
measurement
Vout
I
BO
measurement
1/4
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Sw itch K is closed
- For Unidirectional devices = Sw itch K is open.
VOUT Selection
- Device w ith VBO < 200 Volt
- VOUT = 250 VRMS, R1 = 140 Ω.
- Device w ith VBO 200 Volt
- VOUT = 480 VRMS, R2 = 240Ω.
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BLGALAXY ELECTRICAL
3.
Document Number 0286002
RATINGS AND CHARACTERISTIC CURVES
SMTPAxxx
TEST CIRCUIT 3 FOR IH PARAMETERS:
R
D.U.T.
VBAT=-48V
Surge generator
This is a GO-NO GO Test w hich allow s to confirm the holding current (IH) level in a functional test circuit.
TESTPROCEDURE :
1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T w ith a surge current : Ipp = 10A , 10/1000 ms.
3) The D.U.T w ill come back off-state w ithin 50ms max.
PACKAGE MECHANICAL DATA
SMB(JEDEC DO-214AA)
DIMENSIONS
REF. MILLIMETERS INCHES
MIN. MAX.
E1
MIN.
1.9
MAX.
2.45
0.2
A1
A2
b
c
E
0.075 0.096
0.002 0.008
0.077 0.087
0.006 0.016
0.201 0.22
0.159 0.181
0.05
1.95
0.15
5.1
4.05
3.3
2.2
0.41
5.6
4.6
3.95
1.6
E
E1
D
b
0.13
0.03
0.156
0.063
L
L
0.75
FOOT PRINT in millimeters (inches)
1.52(0.059)
2.75(0.108)
1.52(0.059)
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BLGALAXY ELECTRICAL
4.
Document Number 0286002
RATINGS AND CHARACTERISTIC CURVES
SMTPAxxx
ORDER CODE
SM TPA xx
SURFACE MOUNT
VOLTAGE
TM
TRISIL PROTECTION:
Ipp=50A
ORDERING INFORMATION
part number
SMTPA62
marking
U01
U05
U13
U17
U19
U25
U27
U31
U35
U39
package
weight
base QTY
delivery mode
SMTPA68
SMTPA100
SMTPA120
SMTPA130
SMTPA180
SMTPA200
SMTPA220
SMTPA240
SMTPA270
SMB
0.11g
5000
tape & reel
FIG.1 -- NON REPETITIVE SURGE PEAK ON-STATE
CURRENT VERSUS OVERLOAD DURATION
FIG.2 -- ON-STATE VOLTAGE VERSUS ON-STATE
CURRENT (TYPICAL VALUES).
IT(A)
50
ITSM(A)
40
F=50Hz
35
20
30
25
10
5
20
15
10
VT(V)
2
1
5
t(s)
0
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1
2
3
4
5
6
7
8
9
10
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BLGALAXY ELECTRICAL
5.
Document Number 0286002
RATINGS AND CHARACTERISTIC CURVES
SMTPAxxx
FIG.3 -- RELATIVE VARIATION OF HOLDING CURRENT
VERSUS JUNCTION TEMPERATURE
FIG.4 -- RELATIVE VARIATION OF BREAKOVER
VOLTAGE VERSUS JUNCTION TEMPERATURE
2.0
1.8
1.08
1.06
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.04
1.02
1
.98
.96
°
TJ( C)
TJ (
20
)
0.0
.94
-40
-20
0
20
40
60
80
100
120
-40
-20
0
40
60
80
100
120
FIG.6 -- RELATIVE VARIATION OF THERMAL
IMPEDANCE VERSUS PULSE DURATION
FFFFFIG.5 -- RELATIVE VARIATION OF LEAKAGE CURRENT
VERSUS JUNCTION TEMPERATURE (TYPICAL VALUES).
IRM[TJ]/IRM[TJ=25
VR=VRM
]
ZTH(J-A)( /W)
1E+2
2000
1000
TJ(
)
1E+1
1E+0
1E-1
100
10
tp(s)
1E-1
1
25
1E-3
1E-2
1E+0
1E+1
1E+2
5E+2
50
75
100
125
FIG.7 -- RELATIVE VARIATION OF JUNCTION CAPACITANCE VERSUS
REVERSE VOLTAGE APPLIED (TYPICAL VALUES)
C[VR]/C[VR=50V]
2.5
2
F=1MHZ
1.5
1
.5
VR(V)
0
1
2
5
10
20
50
100
300
www.galaxycn.com
BLGALAXY ELECTRICAL
Document Number 0286002
6.
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